Semiconductor die, semiconductor wafer, semiconductor device including the semiconductor die and method of manufacturing the semiconductor device

ABSTRACT

A nonvolatile memory device includes a memory cell region including first pads and a peripheral circuit region including second pads. The regions comprises switches that are electrically connected with the pads, respectively, a test signal generator that generates test signals and to transmit the test signals to the switches, internal circuits that receive first signals through the pads and the switches, to perform operations based on the first signals, and to output second signals through the switches and the pads based on a result of the operations, and a switch controller that controls the switches so that the pads communicate with the test signal generator during a test operation and that the pads communicate with the internal circuits after a completion of the test operation. The peripheral circuit region is vertically connected to the memory cell region by the first metal pads and the second metal pads directly.

CROSS-REFERENCE TO RELATED APPLICATIONS

This U.S. non-provisional patent application is a continuation-in-partapplication of U.S. non-provisional patent application Ser. No.16/827,746 filed on Mar. 24, 2020, which claims priority under 35 U.S.C.§ 119 to Korean Patent Application No. 10-2019-0107496 filed on Aug. 30,2019, in the Korean Intellectual Property Office, the disclosures ofwhich are incorporated by reference herein in their entireties.

BACKGROUND

Embodiments of the inventive concept described herein relate to asemiconductor device, and more particularly, relate to a semiconductordie easily coupled to another semiconductor die and a semiconductorwafer easily coupled to another semiconductor wafer and a method ofmanufacturing the semiconductor device.

With the advancement of semiconductor manufacturing technologies,various processes for manufacturing a semiconductor device are beingdeveloped. One of the various processes includes a process of couplingtwo or more semiconductor dies to implement one semiconductor device orcoupling two or more semiconductor wafers to implement a plurality ofsemiconductor devices.

In the case of coupling two or more semiconductor dies or two or moresemiconductor wafers, how to align the semiconductor dies or thesemiconductor wafers may determine the yield. In the case where thesemiconductor dies or the semiconductor wafers are not successfullyaligned, the communication between the semiconductor dies or thesemiconductor wafers may not be successfully performed.

In the case where the communication is not successfully performed, asemiconductor device or semiconductor devices implemented by thecoupling may have a defect. This causes a decrease of the yield.

SUMMARY

Embodiments of the inventive concept provide a semiconductor die and asemiconductor wafer beneficial for easy coupling.

According to an exemplary embodiment, a nonvolatile memory deviceincludes a memory cell region including first metal pads and aperipheral circuit region including second metal pads. Each of thememory cell region and/or the peripheral circuit region comprisesswitches electrically connected with corresponding ones of the firstmetal pads and/or the second metal pads respectively, a test signalgenerator configured to generate test signals and to transmit the testsignals to the switches, internal circuits configured to receive firstsignals through the corresponding ones of the first metal pads and/orsecond metal pads and the switches, to perform operations based on thefirst signals, and to output second signals through the switches and thecorresponding ones of the first metal pads and/or second metal padsbased on a result of the operations, and a switch controller configuredto control the switches so that the corresponding ones of the firstmetal pads and/or the second metal pads communicate with the test signalgenerator during a test operation and that the corresponding ones of thefirst metal pads and/or the second metal pads communicate with theinternal circuits after a completion of the test operation. Theperipheral circuit region is vertically connected to the memory cellregion by the first metal pads and the second metal pads directly.

According to an exemplary embodiment, a nonvolatile memory deviceincludes a memory cell region including first metal pads, and aperipheral circuit region including second metal pads. Each of thememory cell region and/or the peripheral circuit region comprisesswitches electrically connected with the corresponding ones of the firstmetal pads and/or the second metal pads, a test signal receiverconfigured to receive reception signals through the first pads and theswitches, internal circuits configured to receive first signals throughthe corresponding ones of the first metal pads and/or the second metalpads and the switches, to perform operations based on the first signals,and to output second signals through the switches and the correspondingones of the first metal pads and/or the second metal pads based on aresult of the operations, and a switch controller configured to controlthe switches so that the corresponding ones of the first metal padsand/or the second metal pads communicate with the test signal receiverduring a test operation and that the corresponding ones of the firstmetal pads and/or the second metal pads communicate with the internalcircuits after a completion of the test operation. The peripheralcircuit region is vertically connected to the memory cell region by thefirst metal pads and the second metal pads directly.

According to an exemplary embodiment, a nonvolatile memory waferincludes first pads disposed in line along a first direction, whereinintervals between the first pads gradually increase or decrease in thefirst direction, test signal devices electrically connected with atleast a part of the first pads and configured to transmit or receivetest signals through the at least the part of the first pads, andinternal circuits, each of the internal circuits being one of anonvolatile memory cell region or a peripheral circuit region configuredto access the nonvolatile memory cell region. The peripheral circuitregion is configured to be vertically connected to the memory cellregion by at least another part of the first pads directly.

BRIEF DESCRIPTION OF THE FIGURES

The above and other objects and features of the inventive concept willbecome apparent by describing in detail exemplary embodiments thereofwith reference to the accompanying drawings.

FIG. 1 illustrates a first semiconductor wafer and a secondsemiconductor wafer according to an embodiment of the inventive concept.

FIG. 2 illustrates an example in which one first die and one second dieare coupled.

FIG. 3 illustrates examples of components of a first die and a seconddie.

FIG. 4 illustrates an exemplary procedure of a test operation ofaligning a first die with a second die.

FIG. 5 illustrates some examples of components of a first die and asecond die.

FIG. 6 illustrates some examples of components of a first die and asecond die.

FIG. 7 illustrates some examples of components of a first die and asecond die.

FIG. 8 illustrates some examples of components of a first die and asecond die.

FIGS. 9 and 10 illustrate examples in which a first die and a second dieeach including pads disposed at regular intervals are misaligned.

FIGS. 11 and 12 illustrate examples in which a first die and a seconddie each including pads disposed at intervals increasing or decreasingin a particular direction are misaligned.

FIG. 13 illustrates an example in which pads of a semiconductor die aredisposed at intervals gradually increasing or decreasing on atwo-dimensional plane.

FIG. 14 illustrates an example in which some pads of a semiconductor dieare disposed at intervals gradually increasing or decreasing on atwo-dimensional plane and the remaining pads of the semiconductor dieare disposed at regular intervals.

FIG. 15 illustrates an example in which sixth pads for a test operationare disposed on horizontal cutting lines and vertical cutting lines of asemiconductor wafer.

FIG. 16 illustrates an example in which sixth pads and seventh pads fora test operation are disposed on horizontal cutting lines and verticalcutting lines of a semiconductor wafer.

FIG. 17 illustrates an example in which sixth pads are disposed atintervals gradually increasing or decreasing at a level of asemiconductor wafer.

FIG. 18 is a block diagram illustrating a memory cell array capable ofbeing implemented with one of first internal circuits and secondinternal circuits of FIG. 3.

FIG. 19 is a circuit diagram illustrating an example of one memory blockof memory blocks of FIG. 18.

FIG. 20 is a block diagram illustrating a peripheral device capable ofbeing implemented with one of first internal circuits and secondinternal circuits of FIG. 3.

FIG. 21 is a diagram illustrating an exemplary nonvolatile memory device

DETAILED DESCRIPTION

Below, embodiments of the inventive concept will be described in detailand clearly to such an extent that a person of ordinary skill in the arteasily implements the inventive concept.

FIG. 1 illustrates a first semiconductor wafer WAF1 and a secondsemiconductor wafer WAF2 respectively having upper surfaces and lowersurfaces extending in a first direction and second direction accordingto an embodiment of the inventive concept. Referring to FIG. 1, firstsemiconductor dies DIE1 may be manufactured on the first semiconductorwafer WAF1 by stacking a plurality of conductor layers and/or insulatorlayers to a third direction perpendicular to the first and seconddirections for the first semiconductor dies DIE1 to be placed within afirst boundary line BDL1. The first semiconductor dies DIE1 may beseparated from the first semiconductor wafer WAF1 by cutting the firstsemiconductor wafer WAF1 along a first horizontal cutting line CLH1corresponding to the first direction and a first vertical cutting lineCLV1 corresponding to the second direction. Spatially relative terms,such as “beneath,” “below,” “lower,” “above,” “upper” and the like, maybe used herein for ease of description to describe one element's orfeature's relationship to another element(s) or feature(s) asillustrated in the figures. It will be understood that the spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. For example, if the device in the figures is turned over,elements described as “below” or “beneath” other elements or featureswould then be oriented “above” the other elements or features. Thus, theterm “below” can encompass both an orientation of above and below. Thedevice may be otherwise oriented (rotated 90 degrees or at otherorientations) and the spatially relative descriptors used hereininterpreted accordingly.

Second semiconductor dies DIE2 may be manufactured on the secondsemiconductor wafer WAF2 by stacking a plurality of conductor layersand/or insulator layers to the third direction for the secondsemiconductor dies DIE2 to be placed within a second boundary line BDL2.The second semiconductor dies DIE2 may be separated from the secondsemiconductor wafer WAF2 by cutting the second semiconductor wafer WAF2along a second horizontal cutting line CLH2 corresponding to the firstdirection and a second vertical cutting line CLV2 corresponding to thesecond direction.

As illustrated by a cross CRS in FIG. 1, the first semiconductor waferWAF1 and the second semiconductor wafer WAF2 may be coupled/combined toeach other to implement a plurality of semiconductor devices (e.g.,nonvolatile memory devices). A plurality of semiconductor devices inwhich the first semiconductor dies DIE1 and the second semiconductordies DIE2 are coupled may be obtained by coupling the firstsemiconductor wafer WAF1 and the second semiconductor wafer WAF2 andcutting a result of the coupling, e.g., by cutting the combined productof the first and second semiconductor wafers WAF1 and WAF2.

FIG. 2 illustrates an example in which one first die DIE1 and one seconddie DIE2 are coupled. Referring to FIGS. 1 and 2, for the coupling thefirst die DIE1 with the second die DIE2, the first die DIE1 may berotated 180 degrees around the first direction. Accordingly, thecoordinate system of the first die DIE1 and the coordinate system of thesecond die DIE2 are illustrated independently of each other.

The first die DIE1 may include first pads PAD1 disposed on an uppersurface of the first die DIE1 in the third direction. The first padsPAD1 may be disposed along the first direction and the second directionat regular intervals. The first, second, and third directions may beperpendicular to one another.

The second die DIE2 may include second pads PAD2 disposed on an uppersurface of the second die DIE2 of the third direction. The second padsPAD2 may be disposed along the first direction and the second directionat regular intervals.

When the first wafer WAF1 and the second wafer WAF2 are coupled, thefirst pads PAD1 of the first die DIE1 and the second pads PAD2 of thesecond die DIE2 are respectively coupled. When locations of the firstpads PAD1 and locations of the second pads PAD2 are accurately aligned(e.g., are aligned within an allowable error range), the coupling maysucceed. When the locations of the first pads PAD1 and the locations ofthe second pads PAD2 are not accurately aligned (e.g., are aligned outof an allowable error range), the coupling may fail.

A semiconductor die and a semiconductor wafer according to an embodimentof the inventive concept support a test operation for determining theaccuracy of alignment. For example, the first and second semiconductorwafers WAF1 and WAF2 may be implemented with a circuit and/or patternsconfigured to test the accuracy of alignment. The semiconductor die andthe semiconductor wafer may include pads that are used for the testoperation. By performing the test operation, the semiconductor die andthe semiconductor wafer according to an embodiment of the inventiveconcept may be aligned and coupled easily and accurately. For example,the test operation may be performed during the coupling of the first andsecond wafers WAF1 and WAF2 to accurately couple the first and secondwafers WAF1 and WAF2.

FIG. 3 illustrates examples of components of the first die DIE1 and thesecond die DIE2. In FIG. 3, as an embodiment, there are illustratedcertain components of the first die DIE1 and the second die DIE2 takenalong a plane defined by the first direction and the third direction.For example, FIG. 3 illustrates a block diagram of certain components ofthe first and second dies DIE1 and DIE2, and some components (e.g., padsand dies) illustrated in FIG. 3 may correspond to a cross-sectionalview. Referring to FIGS. 1 to 3, the first die DIE1 may include firstinternal circuits IC1, a test signal generator TSG, a first switchcontroller SC1, a plurality of first switches SW1 a to SW1 d, aplurality of first pads PAD1 a to PAD1 d, and a third pad PAD3.

The first internal circuits IC1 may include components for performingoperations corresponding to a design purpose of the first die DIE1. Forexample, the first internal circuits IC1 may include a memory cell array100 which will be described with reference to FIGS. 18 and 19 and/or aperipheral device 200 accessing the memory cell array 100 which will bedescribed with reference to FIG. 20. The first internal circuits IC1 maybe electrically connected to the first switches SW1 a to SW1 d.

The test signal generator TSG may receive a first test command TC1 fromthe third pad PAD3. In response to the first test command TC1, the testsignal generator TSG may transmit a test signal TS to the first switchesSW1 a to SW1 d. The first test command TC1 may be input to the third padPAD3 from an external device disposed outside of the first die DIE1 andthe second die DIE2. The third pad PAD3 may be disposed on a surface ofthe first die DIE1 opposite to a surface on which the first pads PAD1 ato PAD1 d coupled to the second die DIE2 are disposed. For example, thethird pad PAD3 may be disposed on a lower surface of the first die DIE1.For example, the upper surface and the lower surface of the first dieDIE1 may be flat surfaces extending parallel to each other.

The first switch controller SC1 may output a first selection signal SEL1for controlling the first switches SW1 a to SW1 d. For example, in atest operation for alignment and coupling, the first switch controllerSC1 may control the first switches SW1 a to SW1 d such that the firstpads PAD1 a to PAD1 d communicate with the test signal generator TSG.For example, the first switch controller SC1 may control the firstswitches SW1 a to SW1 d to allow the first pads PAD1 a to PAD1 d tocommunicate with the test signal generator TSG sequentially. In certainembodiments, the first switch controller SC1 may control the firstswitches SW1 a to SW1 d to allow the first pads PAD1 a to PAD1 d tocommunicate with the test signal generator TSG simultaneously orrandomly.

After the test operation is completed and the first die DIE1 is alignedwith and/or coupled to the second die DIE2, the first switch controllerSC1 may control the first switches SW1 a to SW such that the first padsPAD1 a to PAD1 d communicate with the first internal circuits IC1. Thefirst pads PAD1 a to PAD1 d may correspond to the first pads PAD1 ofFIG. 2.

The second die DIE2 may include second internal circuits IC2, a testsignal receiver TSR, a second switch controller SC2, a plurality ofsecond switches SW2 a to SW2 d, a plurality of second pads PAD2 a toPAD2 d, and a fourth pad PAD4.

The second internal circuits IC2 may include components for performingoperations corresponding to a design purpose of the second die DIE2. Forexample, the second internal circuits IC2 may include the memory cellarray 100 which will be described with reference to FIGS. 18 and 19 orthe peripheral device 200 accessing the memory cell array 100 which willbe described with reference to FIG. 20. The second internal circuits IC2may be electrically connected to the second switches SW2 a to SW2 d.

The test signal receiver TSR may receive a second test command TC2 fromthe fourth pad PAD4. In response to the second test command TC2, thetest signal receiver TSR may receive reception signals RSs from thesecond switches SW2 a to SW2 d. The second test command TC2 may be inputto the fourth pad PAD4 from the external device disposed outside of thefirst die DIE1 and the second die DIE2. The fourth pad PAD4 may bedisposed on a surface of the second die DIE2 opposite to a surface onwhich the second pads PAD2 a to PAD2 d coupled to the first die DIE1 aredisposed. For example, the fourth pad PAD4 may be disposed on a lowersurface of the second die DIE2. For example, the upper surface and thelower surface of the second die DIE2 may be flat surfaces extendingparallel to each other.

When the reception signals RSs are received in response to the secondtest command TC2, the test signal receiver TSR may output the receptionsignals RSs to an external device through the fourth pad PAD4 after orwithout processing the reception signals RSs.

The second switch controller SC2 may output a second selection signalSEL2 for controlling the second switches SW2 a to SW2 d. For example, inthe test operation for alignment and coupling, the second switchcontroller SC2 may control the second switches SW2 a to SW2 d such thatthe second pads PAD2 a to PAD2 d communicate with the test signalreceiver TSR.

After the test operation is completed and the second die DIE2 is alignedwith and/or coupled to the first die DIE1, the second switch controllerSC2 may control the second switches SW2 a to SW2 d such that the secondpads PAD2 a to PAD2 d communicate with the second internal circuits IC2.The second pads PAD2 a to PAD2 d may correspond to the second pads PAD2of FIG. 2.

In some embodiments, one or more of the first and second dies DIE1 andDIE2 may be formed as a controller. When one of the first die DIE1 andthe second die DIE2 is implemented as a controller, the diecorresponding to the controller may include additional pads forcommunicating with an external host device (e.g., a controller tocontrol a nonvolatile memory device) in addition to the pads illustratedin FIG. 3. In certain embodiments, the additional pads may be disposedon a surface on which the third pad PAD3 or the fourth pad PAD4 isdisposed.

In some embodiments, in the test operation, the die implemented as thecontroller from among the first die DIE1 and the second die DIE2 mayreceive a power through a pad(s), which is designated to receive thepower from the external host device, from among the additional padsdescribed above. The die implemented as the controller may supply thereceived power to another die.

For another example, in the test operation, each of the first die DIE1and the second die DIE2 may further include an additional pad configuredto receive a power for the test operation. In this case, the power forthe test operation may not be supplied to the first internal circuitsIC1 and the second internal circuits IC2. The additional pad may bedisposed on a surface on which the third pad PAD3 or the fourth pad PAD4is disposed.

In some embodiments, the third pad PAD3, the fourth pad PAD4, or theadditional pad for receiving the power for the test operation may beused for another purpose after the test operation is completed. Forexample, the third pad PAD3, the fourth pad PAD4, or the additional padmay be configured to exchange signals with the external host device or adebug device.

In this case, like the first switch controller SC1 and the firstswitches SW1 a to SW1 d or like the second switch controller SC2 and thesecond switches SW2 a to SW2 d, switching elements may be added thatelectrically connect the third pad PAD3, the fourth pad PAD4, or theextra pad to the first internal circuits IC1 or the second internalcircuits IC2 after the completion of the test operation.

FIG. 4 illustrates an exemplary procedure of a test operation ofaligning the first die DIE1 with the second die DIE2. An externaldevice, for example, a test device or an alignment and coupling devicemay take the lead in an alignment and test operation.

Referring to FIGS. 3 and 4, in operation S110, the external device mayalign the first die DIE1 with the second die DIE2. In operation S120,the external device may transmit the first test command TC1 to the firstdie DIE1 and may transmit the second test command TC2 to the second dieDIE2.

In operation S130, the first die DIE1 may transmit the test signal TSthrough the first switches SW1 a to SW1 d and the first pads PAD1 a toPAD1 d in response to the first test command TC1. The second die DIE2may receive the reception signals RSs through the second pads PAD2 a toPAD2 d and the second switches SW2 a to SW2 d in response to the secondtest command TC2. For example, in view of the second die DIE2, thereception signals may start to vary in response to receiving (ortransmitting) the first test command TC1.

In operation S140, the second die DIE2 may output the reception signalsRSs to the external device as a test result TR after or withoutprocessing the reception signals RSs. In operation S150, the externaldevice may determine whether the first die DIE1 and the second die DIE2are accurately aligned (e.g., within an allowable error range).

In an embodiment, the first die DIE1 may transmit a voltage of aparticular level or a current of a particular amount as the test signalTS. When the first pads PAD1 a to PAD1 d are accurately aligned with thesecond pads PAD2 a to PAD2 d, voltages of the same particular level (ora level decreased within an allowable error) or currents of the sameparticular amount (or an amount decreased within the allowable error)may be received as the reception signals RSs.

When the first pads PAD1 a to PAD1 d are not accurately aligned with thesecond pads PAD2 a to PAD2 d, voltages of a level smaller than theparticular level (or a level decreased to such an extent as to be out ofthe allowable error) or currents of an amount smaller than theparticular amount (or an amount decreased to such an extent as to be outof the allowable error) may be received as the reception signals RSs.

The external device may determine whether the first die DIE1 and thesecond die DIE2 are accurately aligned (e.g., within the allowable errorrange), by comparing voltage levels or current amounts of the receptionsignals RSs with an expected value (e.g., the particular level or theparticular amount described above).

When the first die DIE1 and the second die DIE2 are not accuratelyaligned, the external device may again align the first die DIE1 with thesecond die DIE2 in operation S110. For example, the external device maycalculate an alignment error based on differences between the voltagelevels or current amounts of the reception signals RSs and the expectedvalue and may again align the first die DIE1 with the second die DIE2depending on the calculated alignment error.

The external device may repeat operation S110 to operation S150 untilthe first die DIE1 and the second die DIE2 are accurately aligned. Whenit is determined that the first die DIE1 and the second die DIE2 areaccurately aligned, in operation S160, the external device may set thefirst switch controller SC1 and the second switch controller SC2 to atest completion mode.

For example, the external device may notify the first switch controllerSC1 and the second switch controller SC2 that the test operation iscompleted, by transmitting test completion commands to the third padPAD3 and the fourth pad PAD4.

As another example, each of the first switch controller SC1 and thesecond switch controller SC2 may include a laser fuse. The externaldevice may set the first switch controller SC1 and the second switchcontroller SC2 to the test completion mode by cutting the laser fuse.For example, the laser fuse may be a conductor pattern/wire that isdesigned to be cut/separated by exposing to a laser beam to be an opencircuit.

As another example, each of the first switch controller SC1 and thesecond switch controller SC2 may include an electrical fuse. Theexternal device may set the first switch controller SC1 and the secondswitch controller SC2 to the test completion mode, by changing states ofelectrical fuses through a means of controlling the electrical fuses ofthe first die DIE1 and the second die DIE2. For example, the electricalfuse may be a conductor pattern/wire that is designed to becut/separated, or a storage element which storing a logic value (e.g., aresistance value) being changed, by flowing a predetermined electricalcurrent through the electrical fuse for the electrical fuse to be anopen circuit.

Before or after operation S160, an operation of coupling the first dieDIE1 and the second die DIE2 may be performed after accurately aligningthe first die DIE1 with the second die DIE2. For example, the externaldevice may couple the first die DIE1 and the second die DIE2 byrespectively bonding the first pads PAD1 a to PAD1 d and the second padsPAD2 a to PAD2 d.

FIG. 5 illustrates some examples of components of a first die DIE1 a anda second die DIE2 a. In FIG. 5, as an embodiment, there are illustratedcertain components of the first die DIE1 a and the second die DIE2 ataken along a plane defined by the first direction and the thirddirection. For example, FIG. 5 illustrates a block diagram of certaincomponents of the first and second dies DIE1 and DIE2, and somecomponents (e.g., pads and dies) illustrated in FIG. 5 may correspond toa cross-sectional view. Compared to the first die DIE1 of FIG. 3, in thefirst die DIE1 a of FIG. 5, the first pad PAD1 d may be directlyconnected to the first internal circuits IC1. For example, there may beno intervening component between the first pad PAD1 d and the firstinternal circuits IC1 except a conductor pattern electrically connectingthe first pad PAD1 d and the first internal circuits IC1.

Also, compared to the second die DIE2 of FIG. 3, in the second die DIE2a of FIG. 5, the second pad PAD2 d may be directly connected to thesecond internal circuits IC2. For example, there may be no interveningcomponent between the second pad PAD2 d and the second internal circuitsIC2 except a conductor pattern electrically connecting the second padPAD2 d and the second internal circuits IC2. For example, one or morepads that are connected to internal circuits may be used for analignment test operation, and the other pads may not be used for thealignment test operation.

The first die DIE1 a and the second die DIE2 a of FIG. 5 are identicalto the first die DIE1 and the second die DIE2 of FIG. 3 except that thefirst pad PAD1 d is directly connected to the first internal circuitsIC1 and the second pad PAD2 d is directly connected to the secondinternal circuits IC2. Thus, additional description will be omitted toavoid redundancy. It will be understood that when an element is referredto as being “connected” or “coupled” to or “on” another element, it canbe directly connected or coupled to or on the other element orintervening elements may be present. In contrast, when an element isreferred to as being “directly connected” or “directly coupled” toanother element, or as “contacting” or “in contact with” anotherelement, there are no intervening elements present. Other words used todescribe the relationship between elements should be interpreted in alike fashion (e.g., “between” versus “directly between,” “adjacent”versus “directly adjacent,” etc.).

FIG. 6 illustrates some examples of components of a first die DIE1 b anda second die DIE2 b. In FIG. 6, as an embodiment, there are illustratedcomponents of the first die DIE1 b and the second die DIE2 b taken alonga plane defined by the first direction and the third direction. Forexample, FIG. 6 illustrates a block diagram of certain components of thefirst and second dies DIE1 and DIE2, and some components (e.g., pads anddies) illustrated in FIG. 6 may correspond to a cross-sectional view.Compared to the first die DIE1 of FIG. 3, in the first die DIE1 b ofFIG. 6, the first pads PAD1 a to PAD1 d may be directly connected to thefirst internal circuits IC1. For example, there may be no interveningcomponent between the first pads PAD1 a to PAD1 d and the first internalcircuits IC1 except corresponding conductor patterns electricallyconnecting the first pads PAD1 a to PAD1 d and the first internalcircuits IC1.

The first die DIE1 b may further include an additional first pad PAD1 ethat is used for the test operation. The test signal generator TSG ofthe first die DIE1 b may receive the first test command TC1 from thethird pad PAD3 and may transmit the test signal TS to the additionalfirst pad PAD1 e in response to the first test command TC1.

Compared to the second die DIE2 of FIG. 3, in the second die DIE2 a ofFIG. 6, the second pads PAD2 a to PAD2 d may be directly connected tothe second internal circuits IC2. For example, there may be nointervening components connected between the second pads PAD2 a to PAD2d and the second internal circuits IC2 except a conductor patternelectrically connecting the second pads PAD2 a to PAD2 d and the secondinternal circuits IC2. The second die DIE2 b may further include anadditional second pad PAD2 e that is used for the test operation.

The test signal receiver TSR of the second die DIE2 b may receive thesecond test command TC2 from the fourth pad PAD4 and may receive areception signal RS from the additional second pad PAD2 e in response tothe second test command TC2. The test signal receiver TSR may output atest result TR through the fourth pad PAD4.

FIG. 6 illustrates one first pad PAD1 e and one second pad PAD2 e usedfor the test operation. However, for the test operation, two or morepads may be used for each die. Also, a pad that is designated to receivea power for the test operation may be added to the first die DIE1 b orthe second die DIE2 b.

FIG. 7 illustrates some examples of components of a first die DIE1 c anda second die DIE2 c. In FIG. 7, as an embodiment, there are illustratedcomponents of the first die DIE1 c and the second die DIE2 c taken alonga plane defined by the first direction and the third direction. Forexample, FIG. 7 illustrates a block diagram of certain components of thefirst and second dies DIE1 and DIE2, and some components (e.g., pads anddies) illustrated in FIG. 7 may correspond to a cross-sectional view.Compared to the first die DIE1 a of FIG. 5, the first die DIE1 c of FIG.7 may not include the third pad PAD3 illustrated in FIG. 5. The testsignal generator TSG may receive a test command TC through at least onepad of the first pads PAD1 a to PAD1 d and at least one switch (e.g.,SW1 c) corresponding to the at least one pad from among the firstswitches SW1 a to SW1 c.

Compared to the second die DIE2 a of FIG. 5, the test signal receiverTSR of the second die DIE2 c of FIG. 7 may receive the test command TCthrough the fourth pad PAD4. The test signal receiver TSR may transmitthe test command TC to the first die DIE1 c through a switch (e.g., SW2c), which corresponds to the at least one pad of the first die DIE1 cdescribed above, from among the second switches SW2 a to SW2 c, and apad, which corresponds to the at least one pad of the first die DIE1 cdescribed above, from among the second pads PAD2 a to PAD2 d.

In an embodiment, the second die DIE2 c may receive a power for the testoperation through the fourth pad PAD4, through another pad designated toreceive the power for the test operation, or through pads forcommunicating with an external host device. For example, the second dieDIE2 c may include additional pads designated to receive power signalfrom and/or to communicate with an external device, e.g., the externalhost device. The second die DIE2 c may supply the first die DIE1 c withthe power received from the external device for the test operationthrough at least one of the second pads PAD2 a to PAD2 d, or through apad designated to a power supply (in the test operation or even afterthe test operation is completed).

In an embodiment, as described with reference to FIG. 3, the first dieDIE1 c and the second die DIE2 c may be modified such that all padsconnected with internal circuits are used for the test operation.

FIG. 8 illustrates some examples of components of a first die DIE1 d anda second die DIE2 d. In FIG. 8, as an embodiment, there are illustratedcomponents of the first die DIE1 d and the second die DIE2 d taken alonga plane defined by the first direction and the third direction. Forexample, FIG. 8 illustrates a block diagram of certain components of thefirst and second dies DIE1 and DIE2, and some components (e.g., pads anddies) illustrated in FIG. 8 may correspond to a cross-sectional view.Compared to the first die DIE1 b of FIG. 6, the first die DIE1 d of FIG.8 may not include the third pad PAD3 illustrated in FIG. 6. The testsignal generator TSG may receive the test command TC through the firstpad PAD1 e.

Compared to the second die DIE2 b of FIG. 6, the test signal receiverTSR of the second die DIE2 d of FIG. 8 may receive the test command TCthrough the fourth pad PAD4. The test signal receiver TSR may transmitthe test command TC to the first die DIE1 d through the second pad PAD2e.

In an embodiment, the second die DIE2 d may receive a power for the testoperation through the fourth pad PAD4, through another pad designated toreceive the power for the test operation, or through pads forcommunicating with an external host device. For example, the second dieDIE2 d may include additional pads designated to receive power signalfrom and/or to communicate with an external device, e.g., the externalhost device. The second die DIE2 d may supply the first die DIE1 d withthe power received from the external device for the test operationthrough a pad designated to a power supply (in the test operation oreven after the test operation is completed).

FIGS. 9 and 10 illustrate examples in which the first die DIE1 and thesecond die DIE2 each including pads disposed at regular intervals aremisaligned. As illustrated in FIG. 9, in the case where the first padsPAD1 of the first die DIE1 and the second pads PAD2 of the second dieDIE2 are misaligned, a level or an amount of each of the receptionsignals RSs (refer to FIGS. 3 and 5 to 8) received at the second dieDIE2 may be smaller than the expected value. However, it may not beindicated which direction the first die DIE1 and the second die DIE2 aremisaligned.

As illustrated in FIG. 10, in the case where the first pads PAD1 of thefirst die DIE1 and the second pads PAD2 of the second die DIE2 aremisaligned, information of misalignment may not be obtained. Forexample, a misalignment direction may not be detected. In certain cases,a misalignment distance may not be detected. Accordingly, when againaligning the first die DIE1 with the second die DIE2 (when proceedingfrom operation S150 to operation S110 in FIG. 4), the external devicemay repeatedly perform alignment in consideration of all cases withregard to a misaligned direction. This causes a decrease in the speed ofalignment and coupling. For example, lack of misalignment informationmay delay and/or complicate realignment processes.

FIGS. 11 and 12 illustrate examples in which the first die DIE1 and thesecond die DIE2 each including pads disposed at intervals increasing ordecreasing in a particular direction are misaligned. As illustrated inFIGS. 11 and 12, intervals of the first pads PAD1 of the first die DIE1may gradually increase along the first direction. Intervals of thesecond pads PAD2 of the second die DIE2 may gradually increase along thefirst direction.

As illustrated in FIG. 11, the second die DIE2 may shift with respect tothe first die DIE1 along the first direction. In this case, the firstpads PAD1 are respectively connected to pads placed adjacent in thefirst direction from pads designed to be connected among the second padsPAD2. The remaining pads of the first and second pads PAD1 and PAD2 maynot be connected to each other.

As illustrated in FIG. 12, the first die DIE1 may shift with respect tothe second die DIE2 along the first direction. In this case, some of thefirst pads PAD1 may be connected to some of the second pads PAD2 asshown in FIG. 12. The other first and second pads PAD1 and PAD2 may notbe connected to each other. For example, when widths of the first andsecond pads PAD1 and PAD2 are smaller than distances between pads, someof the first and second pads PAD1 and PAD2 may not be connected to eachother.

In the case where the first pads PAD1 and the second pads PAD2 aredisposed at intervals gradually increasing or decreasing along aparticular direction, the reception signals RSs may be received throughdifferent pads depending on a direction in which the first die DIE1 andthe second die DIE2 are misaligned. Accordingly, direction informationfor realignment may be obtained from the reception signals RSs, andalignment may be easily corrected and coupling may be efficientlyperformed.

The external device may store a direction of misalignment andrealignment distances corresponding to levels or amounts of thereception signals RSs in a table. A test device or an alignment andcoupling device may obtain a direction and a distance of misalignmentand may align and couple semiconductor dies and semiconductor waferswith reference to the table.

As described with reference to FIG. 10, to prevent the first pads PAD1and the second pads PAD2 from being completely separated from eachother, an interval between at least two closest pads from among thefirst pads PAD1 may be smaller than a width of each of the first padsPAD1. Likewise, an interval between at least two closest pads, whichcorrespond to the at least two pads described above, from among thesecond pads PAD2 may be smaller than a width of each of the second padsPAD2.

FIG. 13 illustrates an example in which pads of a semiconductor dieDIE1/DIE2 are disposed at intervals gradually increasing or decreasingon a two-dimensional plane. Referring to FIG. 13, first and second padsPAD1/PAD2 may be disposed at intervals that gradually increase along thefirst direction. Also, the first and second pads PAD1/PAD2 may bedisposed at intervals that gradually increase along the seconddirection.

When the first and second pads PAD1/PAD2 are disposed as illustrated inFIG. 13, the external device may obtain realignment direction anddistance that are expressed in the form of vectors on the coordinatesystem of the first direction and the second direction. For example, theexternal device may calculate a misalignment direction and amisalignment distance on the basis of signals transferred through thefirst and second pads PAD1 and PAD2 and received by the test signalreceiver TSR in combination with the position information of the firstpads PAD1 and/or the second pads PAD2 respectively. For example, theposition information of the first pads PAD1 and/or the second pads PAD2may be coordinate values of the first pads PAD1 and the second padsPAD2.

FIG. 14 illustrates an example in which some pads (e.g., first andsecond pads PAD1/PAD2) of a semiconductor die DIE1/DIE2 are disposed atintervals gradually increasing or decreasing on a two-dimensional planeand the remaining pads (e.g., fifth pads PAD5) of the semiconductor dieDIE1/DIE2 are disposed at regular intervals.

For example, levels or amounts of reception signals transferred throughthe fifth pads PAD5 disposed at regular intervals may be used for theexternal device to determine a distance of realignment. For example, theaccuracy of the distance of realignment may be improved by combininglevels or amounts of reception signals transferred through the first andsecond pads PAD1/PAD2 and the fifth pads PAD5. For example, the firstand second pads PAD1 and PAD2 may be used in the same manner as or asimilar manner to the first and second pads PAD1 and PAD2 explained inFIG. 13.

FIG. 15 illustrates an example in which sixth pads PAD6 for a testoperation are disposed on horizontal cutting lines CLH1/CLH2 andvertical cutting lines CLV1/CLV2 of a semiconductor wafers WAF1/WAF2.For example, cutting lines described herein may include certain widths.For example, a cutting line may include an elongating area betweensemiconductor dies arranged parallel in a direction. For example, thecutting line may be an elongated area along which a cutting/dicingprocess is performed so that the semiconductor dies are separated fromeach other. Referring to FIG. 15, the sixth pads PAD6 may be disposedbetween adjacent semiconductor dies DIE1/DIE2 such that intervalsbetween the sixth pads PAD6 gradually increase along the first directionand gradually increase along the second direction.

The sixth pads PAD6 may be implemented to be independent of thesemiconductor dies DIE1/DIE2. In an embodiment, the sixth pads PAD6 maycorrespond to the first pad PAD1 e or the second pad PAD2 e of FIG. 6 ormay correspond to the first pad PAD1 e or the second pad PAD2 e of FIG.8. For example, the sixth pads PAD6 may perform a similar function to orthe same function as the first pads PAD1 e and/or the second pads PAD2 eof FIGS. 6 and 8. For example, components for a test operation, whichcorrespond to the sixth pads PAD6, may be implemented on the horizontalcutting lines CLH1/CLH2 and the vertical cutting lines CLV1/CLV2. Forexample, the sixth pads PAD6 and its related components (e.g.,cooperating components) may be formed on the horizontal cutting linesCLH1/CLH2 and the vertical cutting lines CLV1/CLV2 as shown in FIG. 15.

In the process of separating the semiconductor dies DIE1/DIE2 from awafer and/or from each other, the horizontal cutting lines CLH1/CLH2 andthe vertical cutting lines CLV1/CLV2 may be removed by the dicingprocess. Accordingly, the sixth pads PAD6 for the test operation and thecorresponding components may also be removed by the dicing process. Forexample, some or all components associated with the test operation maynot remain in the separated semiconductor dies DIE1/DIE2.

FIG. 16 illustrates an example in which the sixth pads PAD6 and seventhpads PAD7 for a test operation are disposed on the horizontal cuttinglines CLH1/CLH2 and the vertical cutting lines CLV1/CLV2 of thesemiconductor wafers WAF1/WAF2. Referring to FIG. 16, the sixth padsPAD6 may be disposed between adjacent semiconductor dies DIE1/DIE2 suchthat intervals between the sixth pads PAD6 gradually increase along thefirst direction and gradually increase along the second direction. Theseventh pads PAD7 may be disposed at regular intervals along the firstdirection and the second direction. For example, the sixth pads PAD6 inFIGS. 15 and 16 may be used for a test operation similarly to the firstpads PAD1 and/or the second pads PAD2 described with respect to FIGS. 13and 14, and the seventh pads PAD7 may be used for a test operationsimilarly to the fifth pads PAD5 described with respect to FIG. 14.

In examples illustrated in FIGS. 15 and 16, the sixth pads PAD6 aredisposed on the horizontal cutting lines CLH1/CLH2 and the verticalcutting lines CLV1/CLV2 between the four semiconductor dies DIE1/DIE2adjacent to each other such that intervals between the sixth pads PAD6gradually increases or decreases. In certain embodiments, the sixth padsPAD6 may be disposed at intervals gradually increasing or decreasingwithin a larger range.

FIG. 17 illustrates an example in which the sixth pads PAD6 are disposedat intervals gradually increasing or decreasing at a level of thesemiconductor wafers WAF1/WAF2. Referring to FIG. 17, the sixth padsPAD6 may be disposed in an area of specific/certain semiconductor diesof the semiconductor wafers WAF1/WAF2. For example, the sixth pads PAD6of FIG. 17 may be disposed on certain semiconductor dies or betweencertain semiconductor dies as described in the previous embodiments.

As described with reference to FIG. 13, the sixth pads PAD6 may bedisposed at intervals gradually increasing or decreasing in the seconddirection on the semiconductor wafers WAF1/WAF2, as well as the firstdirection thereon. As described with reference to FIG. 15, the sixthpads PAD6 may be repeatedly disposed in two or more areas on thesemiconductor wafers WAF1/WAF2.

As described with reference to FIG. 16, the seventh pads PAD7 may bedisposed in an area of specific/certain semiconductor dies of thesemiconductor wafers WAF1/WAF2 at regular intervals. The seventh padsPAD7 may be repeatedly disposed in two or more areas on thesemiconductor wafers WAF1/WAF2.

FIG. 18 is a block diagram illustrating the memory cell array 100capable of being implemented with one of the first internal circuits IC1and the second internal circuits IC2 of FIG. 3. Referring to FIG. 18,the memory cell array 100 includes a plurality of memory blocks BLK1 toBLKz.

Each of the memory blocks BLK1 to BLKz may include a plurality of memorycells. Each of the memory blocks BLK1 to BLKz may be connected to atleast one ground selection line GSL, word lines WL, and at least onestring selection line SSL. Some of the word lines WL may be used asdummy word lines. Each of the memory blocks BLK1 to BLKz may beconnected to a plurality of bit lines BL. The plurality of memory blocksBLK1 to BLKz may be connected in common to the plurality of bit linesBL.

In an embodiment, each of the plurality of memory blocks BLK1 to BLKzmay correspond to a unit of an erase operation of information stored inthe memory blocks BLK1 to BLKz. For example, the information stored inthe memory cells belonging to each memory block may be erased at thesame time. In certain embodiments, each of the plurality of memoryblocks BLK1 to BLKz may include a plurality of sub-blocks. Each of theplurality of sub-blocks may correspond to a unit of an erase operationof information stored in the plurality of the sub-blocks. For example,the information stored in the memory cells of each sub-block may beerased at the same time.

The string selection lines SSL, the word lines WL, the ground selectionlines GSL, and the bit lines BL may be connected with anothersemiconductor die through pads PADs. For example, all or a part of thestring selection lines SSL, the word lines WL, the ground selectionlines GSL, and the bit lines BL may be connected through switches ordirectly to the pads PADs as described with reference to FIGS. 3 and 5to 8.

FIG. 19 is a circuit diagram of an example of one memory block BLK1 ofthe memory blocks BLK1 to BLKz of FIG. 18. Referring to FIG. 19, aplurality of cell strings CS may be arranged in rows and columns on asubstrate SUB in a first direction, a second direction, and a thirddirection. The plurality of cell strings CS may be connected in commonto a common source line CSL formed on (or in) the substrate SUB. In FIG.19, a location of the substrate SUB and its disposed direction areillustrated to help understand a structure of the memory block BLK1.

Cell strings of the rows may be connected in common to the groundselection line GSL, and cell strings of each row may be connected to acorresponding one of first to fourth upper string selection lines SSLu1to SSLu4 and a corresponding one of first to fourth lower stringselection lines SSLl1 to SSLl4. Cell strings of each column may beconnected to a corresponding one of first to fourth bit lines BL1 toBL4. For a simple and clear illustration, cell strings connected to thesecond and third string selection lines SSL2 l, SSL2 u, SSL3 l, and SSL3u are depicted with thin lines.

Each cell string may include at least one ground selection transistorGST connected to the ground selection line GSL, a first dummy memorycell DMC1 connected to a first dummy word line DWL1, first to tenthmemory cells MC1 to MC10 respectively connected to first to tenth wordlines WL1 to WL10, a second dummy memory cell DMC2 connected to a seconddummy word line DWL2, and lower and upper string selection transistorsSSTl and SSTu respectively connected to the corresponding lower andupper string selection lines.

In each cell string, the ground selection transistor GST, the firstdummy memory cell DMC1, the first to tenth memory cells MC1 to MC10, thesecond dummy memory cell DMC2, and the lower and upper string selectiontransistors SSTl and SSTu may be serially connected along a thirddirection perpendicular to the substrate SUB and may be sequentiallystacked along the third direction perpendicular to the substrate SUB.

The memory block BLK1 may be provided as a 3D memory array. The 3Dmemory array is monolithically formed in one or more physical levels ofarrays of memory cells MC having an active area disposed above a siliconsubstrate and a circuitry associated with the operation of those memorycells MC. The circuit associated with an operation of memory cells MCmay be located above or within such substrate. As used herein, the term“monolithic” means that layers of each level of the array are directlydeposited on the layers of each underlying level of the 3D memory array.

In an embodiment of the inventive concept, the 3D memory array includesvertical cell strings CS (or NAND strings) that are vertically orientedsuch that at least one memory cell is located over another memory cell.The at least one memory cell may comprise a charge trap layer. Each cellstring may further include at least one selection transistor placed overthe memory cells MC. The at least one selection transistor may have thesame structure as the memory cells MC and may be formed uniformly withthe memory cells MC.

The following patent documents, which are hereby incorporated byreference, describe suitable configurations for three-dimensional memoryarrays, in which the three-dimensional memory array is configured as aplurality of levels, with word lines and/or bit lines shared betweenlevels: U.S. Pat. Nos. 7,679,133; 8,553,466; 8,654,587; 8,559,235; andUS Pat. Pub. No. 2011/0233648.

FIG. 20 is a block diagram illustrating the peripheral device 200capable of being implemented with one of the first internal circuits IC1and the second internal circuits IC2 of FIG. 3. Referring to FIG. 20,the peripheral device 200 may include a row decoder block 210, a pagebuffer block 220, a data input and output block 230, a buffer block 240,and a control logic block 250.

The row decoder block 210 may be connected to the ground selection linesGSL, the word lines WL, and the string selection lines SSL. The rowdecoder block 210 may operate under control of the control logic block250.

The row decoder block 210 may decode a row address RA received from thebuffer block 240 and may control voltages to be applied to the stringselection lines SSL, the word lines WL, and the ground selection linesGSL based on the decoded row address.

The page buffer block 220 may be connected to the plurality of bit linesBL. The page buffer block 220 may be connected with the data input andoutput block 230 through a plurality of data lines DL. The page bufferblock 220 may operate under control of the control logic block 250.

In a write operation, the page buffer block 220 may store data to bewritten. The page buffer block 220 may apply voltages to the pluralityof bit lines BL based on the stored data. In a read operation or in averify read operation that is performed in the write operation or anerase operation, the page buffer block 220 may sense voltages of the bitlines BL and may store the sensing result.

The data input and output block 230 may be connected with the pagebuffer block 220 through the plurality of data lines DL. The data inputand output block 230 may receive a column address CA from the bufferblock 240. The data input and output block 230 may output data read bythe page buffer block 220 to the buffer block 240 depending on thecolumn address CA. The data input and output block 230 may provide datareceived from the buffer block 240 to the page buffer block 220, basedon the column address CA.

The buffer block 240 may receive a command CMD and an address ADDR froman external device through a first channel CH1 and may exchange data“DATA” with the external device. The buffer block 240 may operate undercontrol of the control logic block 250. The buffer block 240 maytransmit the command CMD to the control logic block 250. The bufferblock 240 may transmit the row address RA of the address ADDR to the rowdecoder block 210 and may transmit the column address CA of the addressADDR to the data input and output block 230. The buffer block 240 mayexchange the data “DATA” with the data input and output block 230.

The control logic block 250 may exchange a control signal CTRL from theexternal device through a second channel CH2. The control logic block250 may allow the buffer block 240 to route the command CMD, the addressADDR, and the data “DATA”.

The control logic block 250 may decode the command CMD received from thebuffer block 240 and may control the peripheral device 200 depending onthe decoded command. For example, the control logic block 250 mayspecify an order of program operations, in which the row decoder block210 and the page buffer block 220 program memory cells, based ondifferences of structures and distinct characteristics of the memorycells.

The string selection lines SSL, the word lines WL, the ground selectionlines GSL, and the bit lines BL may be connected with anothersemiconductor die through pads PADs. For example, all or a part of thestring selection lines SSL, the word lines WL, the ground selectionlines GSL, and the bit lines BL may be connected through switches or maybe connected directly to the pads PADs as described with reference toFIGS. 3 and 5 to 8.

In the case where a semiconductor die including the memory cell array100 described with reference to FIGS. 18 and 19 and a semiconductor dieincluding the peripheral device 200 described with reference to FIG. 20are coupled, a nonvolatile memory device (e.g., a three-dimensional NANDflash memory device) may be implemented.

Signal lines of the first channel CH1 and the second channel CH2 may beconnected to pads for communicating with an external host device (e.g.,a controller to control a nonvolatile memory device). In the case wherea controller is connected to a nonvolatile memory device where the firstdie DIE1 and the second die DIE2 are coupled, a storage device such as amemory card or a solid state drive may be implemented.

FIG. 21 is a diagram illustrating an exemplary nonvolatile memory device1400. Referring to FIG. 21, The X-direction may correspond to the 1stdirection of the first and/or second internal circuits IC1/IC2. TheY-direction may correspond to the second direction of the first and/orthe second internal circuits IC1/IC2. The Z-direction may corresponds toan opposite direction of the third direction of the first internalcircuit, the third direction of the first internal circuit IC1, thethird direction of the second internal circuit IC2, and/or an oppositedirection of the third direction of the second internal circuit IC2.

The nonvolatile memory device 1400 may have a chip-to-chip (C2C)structure. The C2C structure may refer to a structure formed bymanufacturing an upper chip including a cell region CELL on a firstwafer, manufacturing a lower chip including a peripheral circuit regionPERI on a second wafer, different from the first wafer, and thenconnecting the upper chip and the lower chip in a bonding manner. Forexample, the bonding manner may include a method of electricallyconnecting a bonding metal formed on an uppermost metal layer of theupper chip and a bonding metal formed on an uppermost metal layer of thelower chip. For example, when the bonding metals may be formed of copper(Cu), the bonding manner may be a Cu—Cu bonding, and the bonding metalsmay also be formed of aluminum or tungsten. Each of the peripheralcircuit region PERI and the cell region CELL of the memory device 1400may include an external pad bonding area PA, a word line bonding areaWLBA, and a bit line bonding area BLBA.

The peripheral circuit region PERI may include a first substrate 1210,an interlayer insulating layer 1215, a plurality of circuit elements1220 a, 1220 b, and 1220 c formed on the first substrate 1210, firstmetal layers 1230 a, 1230 b, and 1230 c respectively connected to theplurality of circuit elements 1220 a, 1220 b, and 1220 c, and secondmetal layers 1240 a, 1240 b, and 1240 c formed on the first metal layers1230 a, 1230 b, and 1230 c. In an example embodiment, the first metallayers 1230 a, 1230 b, and 1230 c may be formed of tungsten havingrelatively high resistance, and the second metal layers 1240 a, 1240 b,and 1240 c may be formed of copper having relatively low resistance.

In an example embodiment illustrate in FIG. 21, although the first metallayers 1230 a, 1230 b, and 1230 c and the second metal layers 1240 a,1240 b, and 1240 c are shown and described, they are not limitedthereto, and one or more metal layers may be further formed on thesecond metal layers 1240 a, 1240 b, and 1240 c. At least a portion ofthe one or more metal layers formed on the second metal layers 1240 a,1240 b, and 1240 c may be formed of aluminum or the like having a lowerresistance than those of copper forming the second metal layers 1240 a,1240 b, and 1240 c.

The interlayer insulating layer 1215 may be disposed on the firstsubstrate 1210 and cover the plurality of circuit elements 1220 a, 1220b, and 1220 c, the first metal layers 1230 a, 1230 b, and 1230 c, andthe second metal layers 1240 a, 1240 b, and 1240 c. The interlayerinsulating layer 1215 may include an insulating material such as siliconoxide, silicon nitride, or the like.

Lower bonding metals 1271 b and 1272 b may be formed on the second metallayer 1240 b in the word line bonding area WLBA. In the word linebonding area WLBA, the lower bonding metals 1271 b and 1272 b in theperipheral circuit region PERI may be electrically connected to upperbonding metals 1371 b and 1372 b in the cell region CELL in a bondingmanner, and the lower bonding metals 1271 b and 1272 b and the upperbonding metals 1371 b and 1372 b may be formed of aluminum, copper,tungsten, or the like.

Further, the upper bonding metals 1371 b and 1372 b in the cell regionCELL may be referred as first metal pads and the lower bonding metals1271 b and 1272 b in the peripheral circuit region PERI may be referredas second metal pads.

The cell region CELL may include at least one memory block. The cellregion CELL may include a second substrate 1310 and a common source line1320. On the second substrate 1310, a plurality of word lines 1331 to1338 (i.e., 1330) may be stacked in a direction (a Z-axis direction),perpendicular to an upper surface of the second substrate 1310. At leastone string select line and at least one ground select line may bearranged on and below the plurality of word lines 1330, respectively,and the plurality of word lines 1330 may be disposed between the atleast one string select line and the at least one ground select line.

In the bit line bonding area BLBA, a channel structure CH may extend ina direction, perpendicular to the upper surface of the second substrate1310, and pass through the plurality of word lines 1330, the at leastone string select line, and the at least one ground select line. Thechannel structure CH may include a data storage layer, a channel layer,a buried insulating layer, and the like, and the channel layer may beelectrically connected to a first metal layer 1350 c and a second metallayer 1360 c. For example, the first metal layer 1350 c may be a bitline contact, and the second metal layer 1360 c may be a bit line. In anexample embodiment, the bit line 1360 c may extend in a first direction(a Y-axis direction), parallel to the upper surface of the secondsubstrate 1310.

In an example embodiment illustrated in FIG. 21, an area in which thechannel structure CH, the bit line 1360 c, and the like are disposed maybe defined as the bit line bonding area BLBA. In the bit line bondingarea BLBA, the bit line 1360 c may be electrically connected to thecircuit elements 1220 c providing a page buffer 1393 in the peripheralcircuit region PERI. For example, the bit line 1360 c may be connectedto upper bonding metals 1371 c and 1372 c in the cell region CELL, andthe upper bonding metals 1371 c and 1372 c may be connected to lowerbonding metals 1271 c and 1272 c connected to the circuit elements 1220c of the page buffer 1393.

In the word line bonding area WLBA, the plurality of word lines 1330 mayextend in a second direction (an X-axis direction), parallel to theupper surface of the second substrate 1310, and may be connected to aplurality of cell contact plugs 1341 to 1347 (i.e., 1340). The pluralityof word lines 1330 and the plurality of cell contact plugs 1340 may beconnected to each other in pads provided by at least a portion of theplurality of word lines 1330 extending in different lengths in thesecond direction. A first metal layer 1350 b and a second metal layer1360 b may be connected to an upper portion of the plurality of cellcontact plugs 1340 connected to the plurality of word lines 1330,sequentially. The plurality of cell contact plugs 1340 may be connectedto the circuit region PERI by the upper bonding metals 1371 b and 1372 bof the cell region CELL and the lower bonding metals 1271 b and 1272 bof the peripheral circuit region PERI in the word line bonding areaWLBA.

The plurality of cell contact plugs 1340 may be electrically connectedto the circuit elements 1220 b providing a row decoder 1394 in theperipheral circuit region PERI. In an example embodiment, operatingvoltages of the circuit elements 1220 b providing the row decoder 1394may be different than operating voltages of the circuit elements 1220 cproviding the page buffer 1393. For example, operating voltages of thecircuit elements 1220 c providing the page buffer 1393 may be greaterthan operating voltages of the circuit elements 1220 b providing the rowdecoder 1394.

A common source line contact plug 1380 may be disposed in the externalpad bonding area PA. The common source line contact plug 1380 may beformed of a conductive material such as a metal, a metal compound,polysilicon, or the like, and may be electrically connected to thecommon source line 1320. A first metal layer 1350 a and a second metallayer 1360 a may be stacked on an upper portion of the common sourceline contact plug 1380, sequentially. For example, an area in which thecommon source line contact plug 1380, the first metal layer 1350 a, andthe second metal layer 1360 a are disposed may be defined as theexternal pad bonding area PA.

Input-output pads 1205 and 1305 may be disposed in the external padbonding area PA. Referring to FIG. 21, a lower insulating film 1201covering a lower surface of the first substrate 1210 may be formed belowthe first substrate 1210, and a first input-output pad 1205 may beformed on the lower insulating film 1201. The first input-output pad1205 may be connected to at least one of the plurality of circuitelements 1220 a, 1220 b, and 1220 c disposed in the peripheral circuitregion PERI through a first input-output contact plug 1203, and may beseparated from the first substrate 1210 by the lower insulating film1201. In addition, a side insulating film may be disposed between thefirst input-output contact plug 1203 and the first substrate 1210 toelectrically separate the first input-output contact plug 1203 and thefirst substrate 1210.

Referring to FIG. 21, an upper insulating film 1301 covering the uppersurface of the second substrate 1310 may be formed on the secondsubstrate 1310, and a second input-output pad 1305 may be disposed onthe upper insulating layer 1301. The second input-output pad 1305 may beconnected to at least one of the plurality of circuit elements 1220 a,1220 b, and 1220 c disposed in the peripheral circuit region PERIthrough a second input-output contact plug 1303.

According to embodiments, the second substrate 1310 and the commonsource line 1320 may not be disposed in an area in which the secondinput-output contact plug 1303 is disposed. Also, the secondinput-output pad 1305 may not overlap the word lines 1330 in the thirddirection (the Z-axis direction). Referring to FIG. 21, the secondinput-output contact plug 1303 may be separated from the secondsubstrate 1310 in a direction, parallel to the upper surface of thesecond substrate 1310, and may pass through the interlayer insulatinglayer 1315 of the cell region CELL to be connected to the secondinput-output pad 1305 and the lower bonding metals 1271 a and 1272 a ofthe peripheral circuit area PERI.

According to embodiments, the first input-output pad 1205 and the secondinput-output pad 1305 may be selectively formed. For example, the memorydevice 1400 may include only the first input-output pad 1205 disposed onthe first substrate 1210 or the second input-output pad 1305 disposed onthe second substrate 1310. Alternatively, the memory device 1400 mayinclude both the first input-output pad 1205 and the second input-outputpad 1305.

A metal pattern in an uppermost metal layer may be provided as a dummypattern or the uppermost metal layer may be absent, in each of theexternal pad bonding area PA and the bit line bonding area BLBA,respectively included in the cell region CELL and the peripheral circuitregion PERI.

In the external pad bonding area PA, the memory device 1400 may includea lower metal pattern 1273 a, corresponding to an upper metal pattern1372 a formed in an uppermost metal layer of the cell region CELL, andhaving the same shape as the upper metal pattern 1372 a of the cellregion CELL, in an uppermost metal layer of the peripheral circuitregion PERI. In the peripheral circuit region PERI, the lower metalpattern 1273 a formed in the uppermost metal layer of the peripheralcircuit region PERI may not be connected to a contact. Similarly, in theexternal pad bonding area PA, an upper metal pattern, corresponding tothe lower metal pattern formed in an uppermost metal layer of theperipheral circuit region PERI, and having the same shape as a lowermetal pattern of the peripheral circuit region PERI, may be formed in anuppermost metal layer of the cell region CELL.

The lower bonding metals 1271 b and 1272 b may be formed on the secondmetal layer 1240 b in the word line bonding area WLBA. In the word linebonding area WLBA, the lower bonding metals 1271 b and 1272 b of theperipheral circuit region PERI may be electrically connected to theupper bonding metals 1371 b and 1372 b of the cell region CELL by aCu—Cu bonding.

Further, the bit line bonding area BLBA, an upper metal pattern 1392,corresponding to a lower metal pattern 1252 formed in the uppermostmetal layer of the peripheral circuit region PERI, and having the sameshape as the lower metal pattern 1252 of the peripheral circuit regionPERI, may be formed in an uppermost metal layer of the cell region CELL.A contact may not be formed on the upper metal pattern 1392 formed inthe uppermost metal layer of the cell region CELL.

In an example embodiment, corresponding to a metal pattern formed in anuppermost metal layer in one of the cell region CELL and the peripheralcircuit region PERI, a reinforcement metal pattern having the same shapeas the metal pattern may be formed in an uppermost metal layer inanother one of the cell region CELL and the peripheral circuit regionPERI, and a contact may not be formed on the reinforcement metalpattern.

The cell region CELL of the nonvolatile memory device 1400 may comprisethe memory cell array 100, the string selection lines SSL, the wordlines WL, the ground selection lines GSL, and the pads PADs. Theplurality of word lines 330 may correspond to the word lines WL of FIG.18. A part of the plurality of word lines 330 may be manufactureddifferently from others of the plurality of word lines 330 and used asthe string selection lines SSL and ground selection lines GSL as shownin FIG. 19. The upper bonding metals 371 b, 372 b may correspond topads, among the pads PADs of FIG. 18, connected to the string selectionlines SSL, the word lines WL and the ground selection lines GSL. Theupper bonding metals 371 c and 372 c may correspond to pads, among thepads PADs of FIG. 18, connected to bit lines BL.

The peripheral circuit region PERI of the nonvolatile memory device maycomprise the peripheral device 200. The lower bonding metals 271 b, 272b may correspond to pads, among the pads PADs of FIG. 20, connected tothe string selection lines SSL, the word lines WL and the groundselection lines GSL. The lower bonding metals 271 c and 272 c maycorrespond to pads, among the pads PADs of FIG. 20, connected to bitlines BL. The input-output pads 205 and 305 may carry the address ADDR,the command CMD, the data DATA, and the control signal CTRL.

In the above-described embodiments, components of semiconductor wafersand semiconductor dies are described by using the terms “first”,“second”, “third”, and the like. However, the terms “first”, “second”,“third”, and the like may be used to distinguish components from eachother and do not limit the inventive concept. For example, the terms“first”, “second”, “third”, and the like do not involve an order or anumerical meaning of any form.

In the above embodiments, components according to embodiments of theinventive concept are described by using blocks. The blocks may beimplemented with various hardware devices, such as an integratedcircuit, an application specific IC (ASIC), a field programmable gatearray (FPGA), and a complex programmable logic device (CPLD), firmwaredriven in hardware devices, software such as an application, or acombination of a hardware device and software. Also, the blocks mayinclude circuits implemented with semiconductor elements in anintegrated circuit or circuits enrolled as intellectual property (IP).

According to the inventive concept, semiconductor dies and semiconductorwafers include pads supporting alignment upon coupling. Accordingly,semiconductor dies and semiconductor wafers provided herein supportcoupling of the semiconductor dies and/or semiconductor wafers to beperformed easily.

While the inventive concept has been described with reference toexemplary embodiments thereof, it will be apparent to those of ordinaryskill in the art that various changes and modifications may be madethereto without departing from the spirit and scope of the inventiveconcept as set forth in the following claims.

What is claimed is:
 1. A nonvolatile memory device comprising: a memorycell region including first metal pads; and a peripheral circuit regionincluding second metal pads, wherein each of the memory cell regionand/or the peripheral circuit region comprises: switches electricallyconnected with corresponding ones of the first metal pads and/or thesecond metal pads, respectively; a test signal generator configured togenerate test signals and to transmit the test signals to the switches;internal circuits configured to receive first signals through thecorresponding ones of the first metal pads and/or second metal pads andthe switches, to perform operations based on the first signals, and tooutput second signals through the switches and the corresponding ones ofthe first metal pads and/or second metal pads based on a result of theoperations; and a switch controller configured to control the switchesso that the corresponding ones of the first metal pads and/or the secondmetal pads communicate with the test signal generator during a testoperation and that the corresponding ones of the first metal pads and/orthe second metal pads communicate with the internal circuits after acompletion of the test operation, wherein the peripheral circuit regionis vertically connected to the memory cell region by the first metalpads and the second metal pads directly.
 2. The semiconductor die ofclaim 1, wherein the first metal pads and the second metal pads areformed of copper.
 3. The semiconductor die of claim 1, wherein each ofthe memory cell region and/or the peripheral circuit region furthercomprises: a third pad electrically connected with the test signalgenerator, wherein the test signal generator is configured to transmitthe test signals depending on a test command received through the thirdpad.
 4. The semiconductor die of claim 1, wherein the first metal padsand the second metal pads are connected by bonding manner.
 5. Thesemiconductor die of claim 1, wherein the switch controller includes alaser fuse, wherein, when the laser fuse is in a connected state, theswitch controller controls the switches such that the test signalgenerator and the corresponding ones of the first metal pads and/or thesecond metal pads communicate with each other; and wherein, when thelaser fuse is in a disconnected state, the switch controller controlsthe switches such that the internal circuits and the corresponding onesof the first metal pads and/or the second metal pads communicate witheach other.
 6. The semiconductor die of claim 1, wherein the switchcontroller includes an electrical fuse, wherein, when the electricalfuse is in a first state, the switch controller controls the switchessuch that the test signal generator and the corresponding ones of thefirst metal pads and/or the second metal pads communicate with eachother; and wherein, when the electrical fuse is in a second state, theswitch controller controls the switches such that the internal circuitsand the corresponding ones of the first metal pads and/or the secondmetal pads communicate with each other.
 7. The semiconductor die ofclaim 1, wherein the memory cell region is formed on a first wafer andthe peripheral circuit region is formed on a second wafer.
 8. Thesemiconductor die of claim 1, wherein the corresponding ones of thefirst metal pads and/or the second metal pads are disposed in line alonga first direction, and intervals between the corresponding ones of thefirst metal pads and/or the second metal pads gradually increase ordecrease in the first direction.
 9. The semiconductor die of claim 1,wherein an interval between at least two pads from among the first metalpads and/or the second metal pads is smaller than a width of each of theat least two pads.
 10. The semiconductor die of claim 1, wherein theinternal circuits of the memory cell region include memory cellselectrically connected with string selection lines, word lines, groundselection lines, and bit lines, and wherein at least some of the stringselection lines, the word lines, the ground selection lines, and the bitlines are electrically connected with the first metal pads through theswitches.
 11. The semiconductor die of claim 1, wherein the peripheralcircuit region further comprises: third pads and fourth pads configuredto communicate with an external device, and wherein the internalcircuits of the peripheral circuit region include: a buffer circuitconfigured to receive a row address, a column address and a command fromthe external device through the third pads and to exchange read data orwrite data with the external device through the third pads; a rowdecoder circuit electrically connected with string selection lines, wordlines, and ground selection lines through a part of the second metalpads and a part of the first metal pads, and configured to receive therow address from the buffer block and to adjust voltages of the stringselection lines, the word lines, and the ground selection lines based onthe row address; a page buffer circuit electrically connected with bitlines through another part of the second metal pads and another part ofthe first metal pads, and configured to adjust voltages of the bit linesbased on the write data stored therein in a write operation and to storethe voltages of the bit lines therein as the read data in a readoperation; a data input and output circuit electrically connectedbetween the page buffer circuit and the buffer circuit, and configuredto receive the column address from the buffer circuit and to exchangethe write data and the read data between the page buffer circuit and thebuffer circuit based on the column address; and a control logic circuitconfigured to receive a control signal from the external device throughthe fourth pads, to receive the command from the buffer block, and tocontrol the write operation and the read operation based on the commandand the control signal.
 12. A nonvolatile memory device comprising: amemory cell region including first metal pads; and a peripheral circuitregion including second metal pads, wherein each of the memory cellregion and/or the peripheral circuit region comprises: switcheselectrically connected with the corresponding ones of the first metalpads and/or the second metal pads; a test signal receiver configured toreceive reception signals through the first pads and the switches;internal circuits configured to receive first signals through thecorresponding ones of the first metal pads and/or the second metal padsand the switches, to perform operations based on the first signals, andto output second signals through the switches and the corresponding onesof the first metal pads and/or the second metal pads based on a resultof the operations; and a switch controller configured to control theswitches so that the corresponding ones of the first metal pads and/orthe second metal pads communicate with the test signal receiver during atest operation and that the corresponding ones of the first metal padsand/or the second metal pads to the internal circuits after a completionof the test operation, wherein the peripheral circuit region isvertically connected to the memory cell region by the first metal padsand the second metal pads directly.
 13. The semiconductor die of claim12, further comprising: a third pad electrically connected with the testsignal receiver, wherein the reception signals vary depending on a testcommand received through the third pad.
 14. The semiconductor die ofclaim 12, further comprising: a third pad configured to be used for thetest signal receiver to output a result of the test operation to anexternal device after the reception signals are received.
 15. Thesemiconductor die of claim 12, wherein the first metal pads and/or thesecond metal pads are disposed in line along a first direction, andintervals between the first metal pads and/or the second metal padsgradually increase or decrease in the first direction.
 16. A nonvolatilememory wafer comprising: first pads disposed in line along a firstdirection, wherein intervals between the first pads gradually increaseor decrease in the first direction; test signal devices electricallyconnected with at least a part of the first pads, and configured totransmit or receive test signals through the at least the part of thefirst pads; and internal circuits, each of the internal circuits beingone of a nonvolatile memory cell region or a peripheral circuit regionconfigured to access the nonvolatile memory cell region, wherein theperipheral circuit region is configured to be vertically connected tothe memory cell region by at least another part of the first padsdirectly.
 17. The semiconductor wafer of claim 16, further comprising:second pads disposed in line along a second direction crossing the firstdirection, wherein intervals between the second pads gradually increaseor decrease in the second direction, and wherein the second pads areelectrically connected with the test signal devices to transmit orreceive the test signals.
 18. The semiconductor wafer of claim 16,further comprising: switches configured to control so that the at leastthe another part of the first pads communicate with the test signaldevices in a test operation and the at least the another part of thefirst pads communicate with the internal circuits after a completion ofthe test operation.
 19. The semiconductor wafer of claim 16, wherein thesemiconductor wafer comprises a plurality of semiconductor diesconfigured to be divided into separate semiconductor dies, and whereinthe at least the part of the first pads and the test signal devices aredisposed on a cutting line disposed between the semiconductor dies. 20.The semiconductor wafer of claim 16, further comprising: second padsdisposed in line along the first direction at regular intervals.